Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2580-2584

  Usikov, A S ^a,b   Kim, Dae Woo ^c   Pechnikov, A I ^a   Ruban, Yu V ^a   Mastro, M A ^a   Melnik, Yu ^a   Soukhoveev, V A ^a   Shapovalova, Y V ^a   Kovalenkov, O V ^a   Gainer, G H ^a   Mahajan, S ^c   Dmitriev, V A ^a  

^a TDI Inc   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SUBSTRATES; HOMO EPITAXIES; HOMOEPITAXIAL GROWTH; HOMOEPITAXIAL LAYERS; HYDRIDE VAPOR PHASE EPITAXY; MATERIAL QUALITY; METAL ORGANIC CHEMICAL VAPOUR DEPOSITIONS; PRETREATMENT PROCEDURE;

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SAPPHIRE; SILICON CARBIDE; VAPORS;

ALUMINUM NITRIDE;

EID: 20744440403     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303331     Document Type: Conference Paper

References (6)

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