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Volumn 281, Issue 1, 2005, Pages 183-187
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Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire
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Author keywords
A1. Characterization; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials
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Indexed keywords
CHARACTERIZATION;
CRYSTAL LATTICES;
DISLOCATIONS (CRYSTALS);
LIGHT EMITTING DIODES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
QUANTUM THEORY;
SAPPHIRE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR LASERS;
STIMULATED EMISSION;
SUBSTRATES;
BAND POTENTIAL;
EMISSION EFFICIENCY;
QUANTUM STRUCTURES;
SEMICONDUCTING III-V MATERIALS;
GALLIUM NITRIDE;
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EID: 20744447380
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.03.023 Document Type: Conference Paper |
Times cited : (6)
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References (11)
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