Investigation of residual impurities in 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 215-218

  Nishio, Johji ^a,b   Kushibe, Mitsuhiro ^a,b   Masahara, Koh ^a,b   Kojima, Kazutoshi ^a,b   Ohno, Toshiyuki ^a,b   Ishida, Yuki ^b   Takahashi, Tetsuo ^b   Suzuki, Takaya ^a,b   Tanaka, Tomoyuki ^a,b   Yoshida, Sadafumi ^b   Arai, Kazuo ^b  

^a R&D Association for Future Electron Devices   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Graphite susceptor; Residual impurities; SiC coating

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPILAYERS; FILM GROWTH; HIGH TEMPERATURE EFFECTS; SILICON CARBIDE;

GRAPHITE SUSCEPTORS; RESIDUAL IMPURITIES; SIC COATING;

IMPURITIES;

EID: 4243964527     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.215     Document Type: Article

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