Origins of luminescence from nitrogen-ion-implanted epitaxial GaAs

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2774-2776

  Weng, X ^a   Goldman, R S ^a   Rotberg, V ^a   Bataiev, N ^b   Brillson, L J ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP; IRRADIATION-INDUCED DEFECTS; NEAR-INFRARED EMISSION; SELECTED AREA DIFFRACTION (SAD);

INFRARED RADIATION; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 8344236087     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803940     Document Type: Article

References (14)

1. A. Meldrum, R. F. Haglund Jr., L. A. Boatner, and C. W. White, Adv. Mater. (Weinheim, Ger.) 13, 1431 (2001).
2. X. W. Lin, M. Behar, R. Maltez, W. Swider, Z. Liliental-Weber, and J. Washburn, Appl. Phys. Lett. 67, 2699 (1995).
3. X. Weng, S. J. Clarke, W. Ye, S. Kumar, R. S. Goldman, A. Daniel, R. Clarke, J. Holt, J. Sipowska, A. Francis, and V. Rotberg, J. Appl. Phys. 92, 4012 (2002).
4. X. Weng, W. Ye, R. S. Goldman, and J. C. Mabon, J. Vac. Sci. Technol. B 22, 989 (2004).
5. L. J. Brillson, J. Vac. Sci. Technol. B 19, 1762 (2001).
6. P. Hovington, D. Drouin, and R. Gauvin, Scanning 19, 1 (1997).
7. X. Weng, Ph.D. thesis, University of Michigan, 2003, pp. 239-240.
8. D. V. Lang, A. Y. Cho, A. C. Gossard, M. Ilegems, and W. Wiegmann, J. Appl. Phys. 47, 2558 (1976).
9. P. K. Bhattacharya and S. Dhar, in Semiconductors and Semimetals, Vol. 26, edited by R. K. Willardson and A. C. Beer (Academic, San Diego, 1988), p. 143.
10. J. F. Chen, J. S. Wang, M. M. Huang, and N. C. Chen, Appl. Phys. Lett. 76, 2283 (2000).
11. P. Jayavel, K. Santhakumar, and K. Asokan, Nucl. Instrum. Methods Phys. Res. B 212, 496 (2003).
12. D. V. Lang, Inst. Phys. Conf. Ser. 31, 70 (1977).
13. M. Leroux and B. Gil, in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. T. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London, UK, 1999), p. 45.
14. L. Bellaiche, S.-H. Wei, and A. Zunger, Phys. Rev. B 54 17568 (1996).