Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers

Journal of Applied Crystallography

Volumn 38, Issue 3, 2005, Pages 442-447

  Vetter, W M ^a   Tsuchida, H ^b   Kamata, I ^b   Dudley, M ^a  

^a Stony Brook University   (United States)

^b CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 20444461902     PISSN: 00218898     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0021889805005819     Document Type: Article

References (11)

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