Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals

Materials Science and Engineering: B

Volumn 87, Issue 2, 2001, Pages 173-177

  Vetter, William M ^a   Dudley, Michael ^a  

^a Stony Brook University   (United States)

Author keywords

Dislocations; Silicon carbide crystals; X ray topographs

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPES; OPTICAL RESOLVING POWER; SILICON WAFERS; STACKING FAULTS; SURFACE TOPOGRAPHY; X RAY ANALYSIS;

LELY PLATELETS; X-RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 0035889704     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00738-3     Document Type: Article

References (16)