Characterization of a silicon-germanium quantum dot structure at 4.2 K and 40 mK

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Gandolfo, D S ^a   Williams, D A ^a   Qin, H ^b  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB OSCILLATIONS; POTENTIAL WELLS; STANDARD DEVIATIONS; SURFACE DEPLETION;

CAPACITANCE; CAPACITORS; COMPOSITION; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ERRORS; OSCILLATIONS; RESISTORS; SILICON ALLOYS; THERMAL EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20444438764     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862759     Document Type: Article

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