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Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 346-350

Hole transport in coupled SiGe quantum dots for quantum computation

(3) Cain, Paul A a Ahmed, Haroon a Williams, David A b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b HITACHI CAMBRIDGE LABORATORY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVE COUPLINGS; CARRIER ENERGY; COULOMB OSCILLATION; DEVICE GEOMETRIES; DILUTION REFRIGERATOR; DOUBLE QUANTUM DOTS; GATE VOLTAGES; HOLE TRANSPORTS; PERIOD DOUBLING; SINGLE HOLE; STABILITY DIAGRAM; TRANSPORT MEASUREMENTS; TRENCH ISOLATION; TUNNEL BARRIER;

COMPUTATIONAL LINGUISTICS; CURRENT VOLTAGE CHARACTERISTICS; QUANTUM COMPUTERS; REFRIGERATORS; SILICON ALLOYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036640619 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1482425 Document Type: Article

Times cited : (33)

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