MOSFET modeling gets physical

IEEE Circuits and Devices Magazine

Volumn 17, Issue 6, 2001, Pages 29-36

  Miura Mattausch, M ^a   Mattausch, H J ^a   Arora, N ^b   Yang, C Y ^c  

^a HIROSHIMA UNIVERSITY   (Japan)

^b Hiroshima University ^*  (United States)

^c Department of Computer Science and Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION;

APPROXIMATION THEORY; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; PIECEWISE LINEAR TECHNIQUES; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS;

MOSFET DEVICES;

EID: 0035517256     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/101.968914     Document Type: Article

References (29)

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23. Worst/best device and circuit performances for MOSFETs determined from process fluctuations
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