SCOPUS 정보 검색 플랫폼

Volumn 210, Issue 4, 2000, Pages 629-636

Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilylmethane precursor

(6) Jeong, Jae Kyeong a Na, Hoon Joo a Choi, Jaeho a Hwang, Cheol Seong a Kim, Hyeong Joon a Bahng, Wook b

a Seoul National University (South Korea)

b ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; FLOW OF FLUIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BISTRIMETHYLSILYLMETHANE; GAS FLOW RATE; HOMOEPITAXY; STEP CONTROLLED EPITAXY;

EPITAXIAL GROWTH;

EID: 0033901280 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00744-7 Document Type: Article

Times cited : (14)

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