Novel photon detection based on electronically-induced stress in silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3379, Issue , 1998, Pages 173-181

  Datskos, Panos G ^a,b   Rajic, Slobodan ^a   Datskou, Irene ^c   Egert, Charles M ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF TENNESSEE   (United States)

^c Environmental Engineering Group   (United States)

Author keywords

Electron hole pairs; Microcantilever; Photo induced stress; Photon detector; Thermal detector

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL SENSORS; CIVIL AVIATION; COMPOSITE MICROMECHANICS; DETECTORS; ELECTROMAGNETIC INDUCTION; ELECTRONS; EXCITONS; FOCUSING; GAS DETECTORS; INFRARED DETECTORS; PARTICLE BEAMS; PHOTODETECTORS; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; STRESSES;

ELECTRON-HOLE PAIRS; MICROCANTILEVER; PHOTO-INDUCED STRESS; PHOTON DETECTOR; THERMAL DETECTOR;

CHARGE CARRIERS;

EID: 2042464577     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.317584     Document Type: Conference Paper

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