Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films

Thin Solid Films

Volumn 482, Issue 1-2, 2005, Pages 242-247

  Ray, S C ^a   Okpalugo, T I T ^b   Papakonstantinou, P ^b   Bao, C W ^c   Tsai, H M ^c   Chiou, J W ^c   Jan, J C ^c   Pong, W F ^c   McLaughlin, J A ^b   Wang, W J ^c  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSITY OF ULSTER   (United Kingdom)

^c TAMKANG UNIVERSITY   (Taiwan)

Author keywords

DLC thin film; FTIR; Raman; XANES

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDENING; PHOTODETECTORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SILICON ALLOYS; SOLAR CELLS; SYNTHESIS (CHEMICAL);

C-C ATOMIC BOND STRUCTURE; DLC THIN FILM; ELECTRO LIMUNESCENT DEVICES; XANES;

DIAMOND LIKE CARBON FILMS;

EID: 20244383463     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.11.152     Document Type: Conference Paper

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