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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

Electronic structure characteristics of MBE (molecular beam epitaxy)-grown diluted magnetic semiconductor Ga1-xCrxN films

(12) Takeuchi, Tomoyuki a,b Taguchi, Munetaka b Harada, Yoshihisa b Tokushima, Takashi b Takata, Yasutaka b Chainani, Ashish b Kim, Jung Jin c Makino, Hisao d Yao, Takafumi c,d Tsukamoto, Takeyo a Shin, Shik b,e Kobayashi, Keisuke f

a TOKYO UNIVERSITY OF SCIENCE (Japan)

b RIKEN (Japan)

c TOHOKU UNIVERSITY (Japan)

d TOHOKU UNIVERSITY (Japan)

e UNIVERSITY OF TOKYO (Japan)

f JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

Author keywords

Diluted magnetic semiconductor; Electronic structure; Wurtzite Ga1 xCrxN

Indexed keywords

ABSORPTION SPECTROSCOPY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GROWTH KINETICS; LIGHT ABSORPTION; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTITUTION REACTIONS; THIN FILMS; X RAY SPECTROSCOPY;

ABSORPTION SPECTRA; BAND GAPS; DILUTED MAGNETIC SEMICONDUCTORS (DMS); WURTZITE GA1-XCRXN;

ELECTRONIC STRUCTURE;

EID: 20244381122 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.L153 Document Type: Article

Times cited : (7)

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