200 GHz fmax, fτ InP/In0.53Ga0.47As/InP metamorphic Double Heterojunction Bipolar Transistors on GaAs substrates

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 145-148

  Kim, Y M ^a   Urtega, M ^a   Dahlstrom, M ^a   Rodwell, M J W ^a   Gossard, A C ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ETCHING; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; PHOTOLITHOGRAPHY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL CONDUCTIVITY; AMPLIFICATION; BUFFER LAYERS; CURRENT DENSITY; ELECTRIC CURRENT MEASUREMENT; GALLIUM ALLOYS; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HEAT RESISTANCE; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

LATTICE MATCHED; METAMORPHIC BUFFER LAYER; METAMORPHIC DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; OPTICAL PROJECTION LITHOGRAPHY; WET CHEMICAL ETCHING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

BASE-COLLECTORS; DC CURRENT GAIN; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH THERMAL CONDUCTIVITY; HIGH-POWER DEVICES; METAMORPHIC BUFFER LAYER; METAMORPHIC BUFFERS; REVERSE LEAKAGE CURRENT;

EID: 0038148612     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. 0.47As/InP Double Heterojunction Bipolar Transistors on GaAs Substrates Using InP Metamorphic Buffer Layer', Solid State Electronics, 2002, 46, pp. 1541-1544
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