Novel p-stop structure in n-side of silicon microstrip detector

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 541, Issue 1-2, 2005, Pages 40-46

  Unno, Y ^a   Kohriki, T ^a   Kondo, T ^a   Terada, S ^a   Ohsugi, T ^b   Iwata, Y ^b   Takashima, R ^c   Nakano, I ^d   Yamamura, K ^e   Yamamoto, K ^e  

^a INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c KYOTO UNIVERSITY OF EDUCATION   (Japan)

^d OKAYAMA UNIVERSITY   (Japan)

^e CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

Detector; Microstrip; N in n; N side; P stop; Silicon

Indexed keywords

COLLIDING BEAM ACCELERATORS; ELECTRIC BREAKDOWN; ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; MICROSTRIP DEVICES; PROTON IRRADIATION; SILICA;

MICROSTRIP DETECTORS; N-IN-N; N-SIDE; P-STOP;

SILICON SENSORS;

EID: 20144373294     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.01.036     Document Type: Conference Paper

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