Evaluation of P-stop structures in the N-side of N-on-N silicon strip detector

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3 PART 1, 1998, Pages 401-405

  Unno, Y ^a  

^a INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EFFICIENCY; EVALUATION; FABRICATION; IRRADIATION; PERFORMANCE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SILICON WAFERS; SPURIOUS SIGNAL NOISE;

BEAM TEST; CHARGE COLLECTION EFFICIENCY; P STOP STRUCTURE; SILICON STRIP DETECTOR;

RADIATION DETECTORS;

EID: 0032097336     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.682416     Document Type: Article

References (6)

1. D. Pitzl et al. , "Type inversion in silicon detectors", Nucl. Instr. Meth. A311,pp98-104, 1992
2. P. I. Hopman, J. P. Alexander, A. D. Poland, P. C. Kim, C. W. Ward, "Optimization of silicon microstrip detector design for CLEO III", Nucl. Instr. Metho. A383, pp. 98-108, Dec 1996
3. T. Ohsugi, et al. , IEEE 1997 Nucl. Scie. Symp, Albuquerque, NM
4. LBIC: E. Spencer et al. , "A Fast Shaping Low Power Amplifier-Comparator Integrated Circuit for Silicon Strip Detectors", IEEE Trans. Nucl. Scie, Vol. 42, pp. 796-802, Aug. 1995; CDP: J. DeWitt, "A Pipeline and Bus Interface Chip for Silicon Strip Detector Read-out", Proc. IEEE Nucl. Scie. Symp. , San Francisco, CA. , Nov. 1993
5. Pyrolytic graphite data sheet, Advanced Ceramics Corporation, P. O. Box 94924, Cleveland, Ohio 44101, U. S. A; In Japan: Tomoe Engineering Co. Ltd. , Daini Maruzen Building, 9-2 Nihonbashi 3-Chome, Chuo-Ku, Tokyo 103,Japan
6. O. Toker, S. Masciocchi, E. Nygard, A. Rudge, P. Weilhammer, "Viking: A CMOS low noise monolithic 128-channel frontend for Si strip detector readout", Nucl. Instr. Meth. A340, pp. 572-579, 1994