Micro-discharge noise and radiation damage of silicon microstrip sensors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 383, Issue 1, 1996, Pages 166-173

  Ohsugi, T ^a   Iwata, Y ^a   Ohyama, H ^a   Ohmoto, T ^a   Yoshikawa, M ^a   Handa, T ^a   Kurino, K ^a   Fujita, K ^a   Kitabayashi, H ^a   Tamura, N ^b   Hatakenaka, T ^b   Maeohmichi, M ^b   Takahata, M ^b   Nakao, M ^b   Iwasaki, H ^c   Kohriki, T ^c   Terada, S ^c   Unno, Y ^c   Takashima, R ^d   Yamamoto, K ^e   Yamamura, K ^e   more..

^a HIROSHIMA UNIVERSITY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

^c HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^d KYOTO UNIVERSITY OF EDUCATION   (Japan)

^e CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRODES; MICROSTRIP DEVICES; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON NITRIDE; SILICON SENSORS; SPURIOUS SIGNAL NOISE; STORAGE RINGS;

MICRODISCHARGE NOISE; SILICON MICROSTRIP DETECTORS;

PARTICLE DETECTORS;

EID: 0030414983     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)00692-4     Document Type: Article

References (9)

1. T. Ohsugi et al., these Proceedings (2nd Int. Symp. on Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 1995) Nucl. Instr. and Meth. A 383 (1996) 116.
2. T. Ohsugi et al., Nucl. Instr. and Meth. A 342 (1994) 22.
3. For example, T. Ohsugi et al., Nucl. Instr. and Meth. A 265 (1988) 105, M. Hasegawa et al., Nucl. Instr. and Meth. A 277 (1989) 395, H. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96, E. Fretwurst et al., Nucl. Instr. and Meth. A 342 (1994) 119.
4. For example, T. Ohsugi et al., Nucl. Instr. and Meth. A 265 (1988) 105, M. Hasegawa et al., Nucl. Instr. and Meth. A 277 (1989) 395, H. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96, E. Fretwurst et al., Nucl. Instr. and Meth. A 342 (1994) 119.
5. For example, T. Ohsugi et al., Nucl. Instr. and Meth. A 265 (1988) 105, M. Hasegawa et al., Nucl. Instr. and Meth. A 277 (1989) 395, H. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96, E. Fretwurst et al., Nucl. Instr. and Meth. A 342 (1994) 119.
6. For example, T. Ohsugi et al., Nucl. Instr. and Meth. A 265 (1988) 105, M. Hasegawa et al., Nucl. Instr. and Meth. A 277 (1989) 395, H. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96, E. Fretwurst et al., Nucl. Instr. and Meth. A 342 (1994) 119.
7. T.P. Ma and P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, p. 15.
8. T.P. Ma and P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, p. 158.
9. T.P. Ma and P.V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits, p. 218.