Memory switching in amorphous silicon-rich silicon carbide

Electronics Letters

Volumn 35, Issue 22, 1999, Pages 1976-1977

  Shannon, J M ^a   Lau, S P ^a,b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SILICON CARBIDE;

AMORPHOUS SILICON RICH SILICON CARBIDE; MEMORY SWITCHING; METAL SEMICONDUCTOR METAL STRUCTURES; POOLE-FRENKEL EFFECT;

SEMICONDUCTOR DEVICES;

EID: 0033350465     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991296     Document Type: Article

References (6)

1. OWEN, A.E., and ROBERTSON, J.M.: 'Electronic conduction and switching in chalcogenide glasses', IEEE Trans., 1973, ED-2, pp. 105-122
2. GIBBONS, J.F., and BEADLE, W.E.: 'Switching properties of thin NiO films', Solid State Electron., 1964, 7, pp. 785-797
3. HAIJTO, J., SNELL, A.J., HU, J., HOLMES, A.J., OWEN, A.E., ROSE, M.J., and GIBSON, R.A.G.: 'Metal-semiconductor transition in electroformed chromium/amorphous silicon/vanadium thin-film structures', Phil Mag B. 1994, 69, pp. 237-251
4. HAIJTO, J., OWEN, A.E., SNELL, A.J., LE COMBER, P.G., and ROSE, M.J.: 'Electronic switching in amorphous-semiconductor thin films, Vol II' in KANICKI, J. (Ed.): 'Amorphous and microcrystalline semiconductor devices' Chap. 14, Artech House 1992
5. SHANNON, J.M., LAU, S.P., ANNIS, A.D., and SEALY, B.J.: 'Programmable devices based on current induced conductivity in amorphous silicon alloys', Solid-State Electron., 1998, 42, pp. 91-99
6. SHANNON, J.M., and MORGAN, B.A.: 'Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride', J. Appl. Physics, 1999, 86, (3), pp. 1548-1551