Barrier height changes in amorphous silicon Schottky diodes following dopant implantation

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 919-921

  Chai, M K ^a   Shannon, J M ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; HYDROGENATION; ION ACOUSTIC WAVES; LEAKAGE CURRENTS; SEMICONDUCTOR DOPING;

BARRIER HEIGHTS;

SCHOTTKY BARRIER DIODES;

EID: 0032047954     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980641     Document Type: Article

References (7)

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3. KALBITZER, S., MÜLLER, G., LE COMBER, P.G., and SPEAR, W.E.: 'The effects of ion implantation on the electrical properties of amorphous silicon', Philos. Mag. B, 1980, 41, (4), pp. 439-456
4. STREET, R.A.: 'Hydrogenated amorphous silicon' (Cambridge University Press, 1991), Chap. 5
5. VAN SWAAIJ, R.A.C.M.M., ANNIS, A.D., SEALY, B.J., and SHANNON, J.M.: 'Electronic effects of ion damage in hydrogenated amorphous silicon alloys', J. Appl. Phys., 1997, 82, pp. 4800-4804
6. NIEUWESTEEG, K.J.B.M., VAN DER VEEN, M., VINK, T.J., and SHANNON, J.M.: 'On the current mechanism in reverse-biased amorphous silicon Schottky contacts. II. Reverse-bias current mechanisms', J. Appl. Phys., 1993, 74, pp. 2581-2589
7. SHANNON, J.M., and NIEUWESTEEG, K.J.B.M.: 'Tunnelling effective mass in hydrogenated amorphous silicon', Appl. Phys. Lett., 1993, 62, pp. 1815-1817