Second-harmonic generation in GaAs: Experiment versus theoretical predictions of χxyz(2)

Physical Review Letters

Volumn 90, Issue 3, 2003, Pages

  Bergfeld, S ^a   Daum, W ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; ELECTRON TRANSITIONS; LASER BEAMS; LIGHT POLARIZATION; OXIDATION; PHOTONS; SECOND HARMONIC GENERATION; SOLID STATE LASERS;

CRITICAL-POINT INTERBAND TRANSITION; SECOND HARMONIC SUSCEPTIBILITY; TWO-PHOTON ENERGY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037462959     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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23. 0 transition was reported in a previous SHG study of GaAs [7]. Our spectra for both p-in/s-out and p-in/p-out polarizations (with a good signal-to-noise ratio in this spectral range) do not show any indication of such a resonance.