Structural and compositional analysis of transition-metal-doped ZnO and GaN PLD thin films

Applied Surface Science

Volumn 248, Issue 1-4, 2005, Pages 406-410

  Dorneles, L S ^a   O'Mahony, D ^a   Fitzgerald, C B ^a   McGee, F ^a   Venkatesan, M ^a   Stanca, I ^a   Lunney, J G ^a   Coey, J M D ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

Ferromagnetic semiconductor; Pulsed laser deposition; Sputtering

Indexed keywords

ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; GALLIUM NITRIDE; LASER ABLATION; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; STOICHIOMETRY; TRANSITION METAL COMPOUNDS; X RAY DIFFRACTION; ZINC OXIDE;

DILUTED MAGNETIC SEMICONDUCTORS (DMS); FERROMAGNETIC SEMICONDUCTORS; OPTICAL REFLECTIVITY; PLASMA ION ENERGY DISTRIBUTION;

THIN FILMS;

EID: 19944389257     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.03.044     Document Type: Conference Paper

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