Origin and FEM-assisted evaluation of residual stress in thermally oxidized porous silicon

Computational Materials Science

Volumn 34, Issue 2, 2005, Pages 123-128

  Tóth, Géza ^a   Kordás, Krisztián ^a   Pap, Andrea Edit ^a   Vähäkangas, Jouko ^a   Uusimäki, Antti ^a   Leppävuori, Seppo ^a  

^a UNIVERSITY OF OULU   (Finland)

Author keywords

Finite element method; Porous silicon; Residual strain; Thermal oxidation

Indexed keywords

DATA REDUCTION; FINITE ELEMENT METHOD; NANOSTRUCTURED MATERIALS; POROUS SILICON; STRAIN; THERMAL STRESS; THERMOOXIDATION; X RAY DIFFRACTION;

ELECTROCHEMICAL DARK ETCHING; OXIDATION PROCESS; THERMAL EXPANSION COEFFICIENT (TEC); UNIT CELLS;

RESIDUAL STRESSES;

EID: 19944381227     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.12.071     Document Type: Article

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