Potential sputtering and kinetic sputtering from a water adsorbed Si(1 0 0) surface with slow highly charged ions

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 232, Issue 1-4, 2005, Pages 244-248

  Okabayashi, N ^a,c   Komaki, K ^a   Yamazaki, Y ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Highly charged ions; Kinetic sputtering; Potential sputtering; Si(1 0 0); Water

Indexed keywords

ADSORPTION; DESORPTION; ELECTRIC FIELD EFFECTS; IONS; POTENTIAL ENERGY; SPUTTERING; ULTRAHIGH VACUUM; WATER;

HIGHLY CHARGED IONS; KINETIC SPUTTERING; POTENTIAL SPUTTERING; SI(1 0 0 );

SILICON;

EID: 19944379816     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.03.052     Document Type: Conference Paper

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