Growth and characterization of carbon-doped low-temperature GaAs

Journal of Crystal Growth

Volumn 237-239, Issue 1-4, 2002, Pages 1440-1444

  Herfort, J ^a   Ulrici, W ^a   Moreno, M ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Defects; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Gallium arsenide

Indexed keywords

ABSORPTION; CARBON; CRYSTAL DEFECTS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; STRAIN; X RAY DIFFRACTION;

INFRARED ABSORPTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036530921     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02236-9     Document Type: Article

References (15)