Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth

Applied Physics A: Materials Science and Processing

Volumn 62, Issue 5, 1996, Pages 459-461

  Norenberg H ^a,b   Mazuelas, A ^a   Hagenstein, K ^a   Hey, R ^a   Grahn, H T ^a,c  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

BEAM EQUIVALENT PRESSURE; CARBON INCORPORATION; DEPOSITION PARAMETERS; MOLECULAR BEAM EPITAXIAL GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030142477     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01567117     Document Type: Article

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