Monte Carlo study of high-field carrier transport in 4H-SiC including band-to-band tunneling

Journal of Applied Physics

Volumn 93, Issue 2, 2003, Pages 1099-1107

  Hjelm, M ^a,b   Nilsson, H E ^a   Martinez, A ^b   Brennan, K F ^c   Bellotti, E ^d  

^a MID SWEDEN UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^d Boston University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON TUNNELING; IONIZATION; MONTE CARLO METHODS; PHONONS; SCATTERING;

HIGH-FIELD CARRIER TRANSPORT;

SILICON CARBIDE;

EID: 0037439676     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1530712     Document Type: Article

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