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Journal of Crystal Growth

Volumn 235, Issue 1-4, 2002, Pages 425-438

A model for isotropic crystal growth from vapor on a patterned substrate

(3) Khenner, M a Braun, R J a Mauk, M G b

a UNIVERSITY OF DELAWARE (United States)

b GE ENERGY (United States)

Author keywords

A1. Computer simulation; A3. Selective epitaxy; A3. Vapor phase epitaxy

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; FINITE DIFFERENCE METHOD; MATHEMATICAL MODELS; SUBSTRATES; VAPOR PHASE EPITAXY;

ISOTROPIC CRYSTAL GROWTH;

CRYSTAL GROWTH;

EID: 0036467114 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01934-0 Document Type: Article

Times cited : (17)

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