Characterization of InGaN single layers and quantum wells grown by LP-MOVPE

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 311-314

  Schineller, B ^a   Lim, P H ^a   Schon O ^b   Protzmann, H ^b   Heuken, M ^a,b   Heime, K ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242913     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<311::AID-PSSB311>3.0.CO;2-F     Document Type: Article

References (4)

1. S. KELLER, B. P. KELLER, D. KAPOLNEK, and A. C. ABARE, Appl. Phys. Lett. 68, 3147 (1996).
2. F. SCHOLZ, V. HÄRLE, H. BOLAY, F. STEUBER, B. KAUFMANN, G. REYHER, A. DÖRNEN, O. GERÖRER, S.-J. IM, and A. HANGLEITER, Proc. Topical Workshop on III-V Nitrides, Nagoya 1995.
3. T. TAKEUCHI, H. TAKEUCHI, S. SOTA, H. SAKAI, H. AMANO, and I. AKASAKI, Jpn. J. Appl. Phys., Part 2, 36, L177 (1997).
4. N. GRANDJEAN, J. MASSIES, M. LEROUX, and P. DE MIERRY, Appl. Phys. Lett. 72, 3190 (1998).