Monte Carlo Based Calculation of the Electron Dynamics in a Two-Dimensional GaN/AlGaN Heterostructure in the Presence of Strain Polarization Fields

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 209-214

  Yu, Tsung Hsing ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

heterostructures; Monte Carlo; two dimensional transport

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM GALLIUM NITRIDE; ELECTRON TRANSPORT PROPERTIES; GALLIUM ALLOYS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDUCED POLARIZATION LOGGING; MONTE CARLO METHODS; OPTICAL LATTICES; POLARIZATION; SCHRODINGER EQUATION; SEMICONDUCTOR ALLOYS;

DEFORMATION POTENTIAL; ELECTRONIC WAVE FUNCTIONS; INTERFACE ROUGHNESS; LATTICE SCATTERING; SELF-CONSISTENT SOLUTION; STEADY-STATE VELOCITY; TWO-DIMENSIONAL SCATTERING; TWO-DIMENSIONAL SYSTEMS;

GALLIUM NITRIDE;

EID: 1942481213     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020725524535     Document Type: Article

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