메뉴 건너뛰기




Volumn 24, Issue 12, 2003, Pages 1276-1279

Optical characteristics and magnetism of Mn+-ion-implanted MOCVD-GaN film

Author keywords

Curie conversion temperature; Diluted magnetic semiconductor; Ferromagnetism; GaN; Mn+

Indexed keywords

FERROMAGNETISM; ION IMPLANTATION; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS;

EID: 1942477304     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (17)
  • 1
    • 0032093360 scopus 로고    scopus 로고
    • Superlattice and multi-layer structures based on ferromagnetic semiconductor (Ga,Mn)As
    • Shen A, Ohno H, Matsukura F, et al. Superlattice and multi-layer structures based on ferromagnetic semiconductor (Ga,Mn)As. Physica B, 1998, 249-251: 809
    • (1998) Physica B , vol.249-251 , pp. 809
    • Shen, A.1    Ohno, H.2    Matsukura, F.3
  • 2
    • 0000202414 scopus 로고    scopus 로고
    • Ferromagnetism induced by free carriers in p-type structures of diluted magnetic semiconductors
    • Diet T, Cibert J, Kossacki P, et al. Ferromagnetism induced by free carriers in p-type structures of diluted magnetic semiconductors. Physica E, 2000, 7: 967
    • (2000) Physica E , vol.7 , pp. 967
    • Diet, T.1    Cibert, J.2    Kossacki, P.3
  • 3
    • 0034138559 scopus 로고    scopus 로고
    • Ferromagnetism and heterostructures of III-V magnetic semiconductors
    • Ohno H. Ferromagnetism and heterostructures of III-V magnetic semiconductors. Physica E, 2000, 6: 702
    • (2000) Physica E , vol.6 , pp. 702
    • Ohno, H.1
  • 5
    • 0033204339 scopus 로고    scopus 로고
    • Magnetoelectronics application
    • Prinz G A. Magnetoelectronics application. J Magn Mater, 1999, 200: 57
    • (1999) J. Magn. Mater. , vol.200 , pp. 57
    • Prinz, G.A.1
  • 7
    • 0035933085 scopus 로고    scopus 로고
    • Raman scattering study of gallium nitride heavily doped with manganese
    • Gebicki W, Adamowicz L, Strzeszewki J, et al. Raman scattering study of gallium nitride heavily doped with manganese. Mater Sci Eng, 2001, B82: 182
    • (2001) Mater. Sci. Eng. , vol.B82 , pp. 182
    • Gebicki, W.1    Adamowicz, L.2    Strzeszewki, J.3
  • 8
    • 1942528156 scopus 로고    scopus 로고
    • Defects and impurities in GaN
    • Xu X L, Shi C S. Defects and impurities in GaN. Progress in Phys, 2001, 21: 1
    • (2001) Progress in Phys. , vol.21 , pp. 1
    • Xu, X.L.1    Shi, C.S.2
  • 10
    • 85010812746 scopus 로고    scopus 로고
    • Gallium vacancies and the yellow luminescence in GaN
    • Neugebaur J, Van de Walle C G. Gallium vacancies and the yellow luminescence in GaN. Appl Phys Lett, 1996, 69: 503
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 503
    • Neugebaur, J.1    van de Walle, C.G.2
  • 11
    • 0031169294 scopus 로고    scopus 로고
    • Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical method
    • Yu G, Wang G, Ishikawa H, et al. Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical method. Appl Phys Lett, 1997, 70: 3210
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 3210
    • Yu, G.1    Wang, G.2    Ishikawa, H.3
  • 12
    • 0000543163 scopus 로고
    • On the photoionization of deep impurity centers in semiconductors
    • Lucovsky G. On the photoionization of deep impurity centers in semiconductors. Solid State Commun, 1965, 3: 299
    • (1965) Solid State Commun. , vol.3 , pp. 299
    • Lucovsky, G.1
  • 13
    • 0000159337 scopus 로고    scopus 로고
    • Excited states of Fe in GaN
    • Heitz R, Maxim P, Eckey L, et al. Excited states of Fe in GaN. Phys Rev, 1997, B55: 4382
    • (1997) Phys. Rev. , vol.B55 , pp. 4382
    • Heitz, R.1    Maxim, P.2    Eckey, L.3
  • 14
    • 0012492584 scopus 로고    scopus 로고
    • Optical study of GaN:Mn co-doped with Mg grown by metal organic vapor phase epitaxy
    • Korotkov R Y, Gegie J M, Han B, et al. Optical study of GaN:Mn co-doped with Mg grown by metal organic vapor phase epitaxy. Physica B, 2001, 308: 18
    • (2001) Physica B , vol.308 , pp. 18
    • Korotkov, R.Y.1    Gegie, J.M.2    Han, B.3
  • 15
    • 0021494078 scopus 로고
    • A universal trend in the binding energies of deep impurities in semiconductors
    • Caldas M J, Fazzio A, Zunger A. A universal trend in the binding energies of deep impurities in semiconductors. Appl Phys Lett, 1984, 45: 671
    • (1984) Appl. Phys. Lett. , vol.45 , pp. 671
    • Caldas, M.J.1    Fazzio, A.2    Zunger, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.