Raman scattering study of gallium nitride heavily doped with manganese

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 182-184

  Gebicki W ^a   Adamowicz, L ^a   Strzeszewski, J ^a   Podsiadlo S ^a   Szyszko, T ^a   Kamler, G ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Disordered activated phonons; Gallium nitride; Lattice dynamic; Raman scattering

Indexed keywords

CHARGE CARRIERS; GALLIUM NITRIDE; MANGANESE; PHONONS; RAMAN SCATTERING; SEMICONDUCTOR DOPING;

FREE CARRIERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035933085     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00748-0     Document Type: Article

References (6)