Optical characteristics of Mn+-ion-implanted GaN epilayers

Journal of Crystal Growth

Volumn 245, Issue 3-4, 2002, Pages 193-197

  Shon, Yoon ^a   Kwon, Y H ^a   Kang, T W ^a   Fan, X ^b   Fu, D ^b   Kim, Yongmin ^c  

^a Dongguk University   (South Korea)

^b WUHAN UNIVERSITY   (China)

^c Dankook University   (South Korea)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting gallium compounds

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ION IMPLANTATION; MANGANESE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHASE INTERFACES; PHOTOLUMINESCENCE;

EPILAYERS;

GALLIUM NITRIDE;

EID: 0036846306     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01664-0     Document Type: Article

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