Growth temperature and composition effects in InGaAsN quantum wells for GaAs-based 1300 nm emitters

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Volumn , Issue , 2002, Pages 268-269

  Klem, J F ^a   Serkland, D K ^a   Geib, K M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

DEFECT DENSITIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036457142     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. S. Sato, N. Nishiyama, T. Miyamoto, T. Takahashi, N. Jikutani, M. Arai, A. Matsutani, F. Koyama, and K. Iga, "Continuous wave operation of 1.26 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapor deposition," Electron. Lett. 36, 2018-2019 (2000).
3. G. Steinle, H. Riechert, and A.Yu. Egorov, "Monolithic VCSEL with InGaAsN active region emitting at 1.28 μm and CW output power exceeding 500 μW at room temperature," Electron. Lett. 37, 93-95 (2001).
4. A.Yu. Egorov, D. Bernklau, B. Borchert, S. Illek, D. Livshits, A. Rucki, M. Schuster, A. Kaschner, A. Hoffmann, Gh. Dumitras, M.C. Amann, and H. Riechert, "Growth of high quality InGaAsN heterostructures and their laser application," J. Crystal Growth 227-228, 545-552 (2001).
5. W. Li, M. Pessa, T. Ahlgren, and J. Decker, "Origin of improved luminescence efficiency after annealing of GaInNAs materials grown by molecular beam epitaxy," Appl. Phys. Lett. 79, 1094-1096 (2001).