Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Materials Chemistry and Physics

Volumn 85, Issue 2-3, 2004, Pages 370-376

  Cheng, Wenjuan ^a   Jiang, Jinchun ^a   Zhang, Yang ^a   Zhu, Hesun ^a   Shen, Dezhong ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Microwave plasma CVD; Silicon carbon nitride; X ray photo emission spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL BONDS; CRYSTAL STRUCTURE; CRYSTALLIZATION; EMISSION SPECTROSCOPY; FIELD EMISSION MICROSCOPES; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

FLOW RATES; MICROWAVE PLASMA CVD; SILICON CARBON NITRIDE; X-RAY PHOTO-EMISSION SPECTROSCOPY;

SILICON COMPOUNDS;

EID: 1942451777     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2004.01.015     Document Type: Article

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