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Volumn 84, Issue 4, 2004, Pages 490-492

Determination of in concentration in pseudomorphic In xGa 1-xN quantum wells based on convergent-beam electron diffraction

(4) Stirman, J N a Takeguchi, M a,b McCartney, M R a Smith, David J a

a ARIZONA STATE UNIVERSITY (United States)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL LAYERS; LATTICE-PARAMETER VARIATIONS;

COMPOSITION; COOLING; CRYSTAL GROWTH; CRYSTAL LATTICES; ELECTRON DIFFRACTION; ETCHING; INTERFACES (MATERIALS); SAPPHIRE; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242307335 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1641173 Document Type: Article

Times cited : (5)

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