Modeling and analysis of high-speed electro-optic modulation in high confinement silicon waveguides using metal-oxide-semiconductor configuration

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6008-6015

  Barrios, C A ^a,b   Lipson, M ^b  

^a UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRO-OPTIC MODULATION; MICRORING RESONATORS; SILICON WAVEGUIDES; SWITCHING TIMES;

ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ELECTROOPTICAL EFFECTS; LIGHT MODULATION; MOS DEVICES; OPTICAL RESONATORS; SEMICONDUCTING SILICON; SWITCHING;

OPTICAL WAVEGUIDES;

EID: 19144371177     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1814791     Document Type: Article

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