CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

IEEE Photonics Technology Letters

Volumn 12, Issue 6, 2000, Pages 660-662

  Dainesi, P ^a   Kung A ^a   Chabloz, M ^c   Lagos, A ^b   Fluckiger Ph ^a   Ionescu, A ^a   Fazan, P ^a   Declerq, M ^a   Renaud, Ph ^a   Robert, Ph ^a  

^a EPFL   (Switzerland)

^b CSEM   (Switzerland)

^c Centre de Microtechnologie ^*

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; ELECTROOPTICAL EFFECTS; LIGHT ABSORPTION; LIGHT MODULATION; REFRACTIVE INDEX; SILICON ON INSULATOR TECHNOLOGY;

MACH-ZEHNDER INTERFEROMETER; PLASMA DISPERSION EFFECT; THERMOOPTIC EFFECT;

INTERFEROMETERS;

EID: 0342521413     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.849076     Document Type: Article

References (11)

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