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Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 20, 2001, Pages 2052051-20520514

Tight-binding molecular dynamics study of vacancy-interstitial annihilation in silicon

(3) Zawadzki, Mary T a Luo, Weiwei a Clancy, Paulette a

a Cornell University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ARTICLE; COMPUTER SIMULATION; ENERGY; MOLECULAR DYNAMICS; SEMICONDUCTOR; TEMPERATURE;

EID: 0034904750 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/physrevb.63.205205 Document Type: Article

Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.