Quantitative analysis of screw dislocations in 6H-SiC single crystals

Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics

Volumn 19, Issue 2-4, 1997, Pages 153-164

  Dudley, M ^a   Si, W ^a   Wang, S ^a   Carter, C ^a   Glass, R ^a  

^a Stony Brook   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001943780     PISSN: 03926737     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03040968     Document Type: Article

References (15)

1. FRANK F. G., Ada Crijst, 4 (1951) 497.
2. VERMA A. R., in Crystal Groidh and Dislocations (Buttenvorths, London) 1953, pp. 166-172.
3. SUNAGAWA I. and BENNEMA P., J. Cryst. Growth, 53 (1981) 490.
4. TANAKA H., UEMURA Y. and INOMATA Y., J. Cryst. Growth, 53 (1981) 630.
5. KRISHNA A. P., JIANG S. S. and LANG A. R., J. Cryst. Growth, 71 (1985) 41.
6. GOLIGHTLY J. P., Z. Krist., 130 (1969) 310.
7. KOMATSU H. and MIYASHITA S., Jpn. J. Appl Phys., 32 (1993) 1478.
8. DUDLEY M., WANG S., HUANG W., CARTER G. H. jr. and TSVETKOV V., J. Phys. D, 28 (1995) A63.
9. WANG S., Ph. D. Thesis, State University of New York at Stony Brook, USA, 1995.
10. TANNER B. K., MIDGLEY M. and SAFA M., J. Appl. Crijst., 10 (1977) 281.
11. KLAPPER H., J. Appl. Cryst., 9 (1976) 310.
12. MARDIX S., LANG A. R. and BELCH L, Philos. Mag., 24 (1971) 683.
13. MILTAT J., in Characterization of Crystal Growth Defects by X-Ray Methods, edited by B. K. TANNER and D. K. BOWEN (Plenum Press, New York) 1980, p. 408.
14. MILTAT J. E. A. and BOWEN D. K., J. Appl. Crijst., 8 (1975) 657.
15. KIRSCHSTEIN G. (Chief Editor), Gmelin Handbook of Inorganic Chemistry, 8th edition, Silicon, Supplement, Vol. B2, Properties of Crystalline Silicon Carbide (Springer-Verlag, New York) 1984.