Thermal stability of sputtered TiN as metal gate on 4H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 805-808

  Danielsson, E ^a   Harris, C I ^b   Zetterling, C M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

Author keywords

CV Measurements; Gate Metal; MOS; Thermal Stability; TiN

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; COMPOSITION EFFECTS; GATES (TRANSISTOR); HYSTERESIS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TITANIUM NITRIDE; VOLTAGE MEASUREMENT;

FLATBAND VOLTAGE; TITANIUM SILICIDE;

MOS DEVICES;

EID: 0031648332     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.805     Document Type: Article

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