Direct nanoimprinting of Si single crystals using SiC molds for ordered anodic tunnel etching

Advanced Materials

Volumn 17, Issue 10, 2005, Pages 1293-1295

  Nishio, Kazuyuki ^a,b   Yasui, Kenji ^a   Matsumoto, Futoshi ^c   Kanezawa, Kenji ^a   Masuda, Hideki ^a,b,c  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROCHEMISTRY; ETCHING; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SOLUTIONS; SURFACE PROPERTIES;

ANODIC TUNNEL ETCHING; ELECTROCHEMICAL ETCHING; HOLE-ARRAY STRUCTURES; NANOIMPRINTING;

SILICON;

EID: 18844381347     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200401879     Document Type: Article

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