Surface passivation of InGaAs/InP heterostructures using UV-irradiation and ozone

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 459-462

  Driad, R ^a   Lu, Z H ^a   Laframboise, S ^a   Scansen, D ^a   McKinnon, W R ^a   McAlister, S P ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; IRRADIATION; OZONE; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; STOICHIOMETRY; SURFACES; ULTRAVIOLET RADIATION;

CHEMICAL TREATMENT; CURRENT GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032293660     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)