Efficient methods for Hall factor and transport coefficient evaluation for electrons and holes in Si and SiGe based on a full-band structure

Extended Abstracts of 1998 6th International Workshop on Computational Electronics, IWCE 1998

Volumn 1998-October, Issue , 1998, Pages 104-107

  Jungemann, C ^a   Bartels, M ^a   Keith, S ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; IONIC CONDUCTION; SILICON;

ELECTRONS AND HOLES; EMPIRICAL PSEUDOPOTENTIAL METHOD; EQUILIBRIUM TRANSPORT; FULL BAND STRUCTURES; HALL FACTOR; HYDRODYNAMIC MODEL; TRANSPORT COEFFICIENT; TRANSPORT PARAMETERS;

SI-GE ALLOYS;

EID: 84907684995     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.1998.742721     Document Type: Conference Paper

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