Dislocation blocking in InxGa1-xAs (x<0.20) layers grown on GaAs substrates revealed by strain sensitive etching with aqueous CrO3-HF solutions

Applied Physics Letters

Volumn 70, Issue 21, 1997, Pages 2873-2875

  MacPherson, G ^a   Goodhew, P J ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001529339     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119054     Document Type: Article

References (11)

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