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Volumn 15, Issue 1, 2000, Pages 115-124

Domain structure and electrical properties of highly textured PbZrxTi1-xO3 thin films grown on LaNiO3-electrode-buffered Si by metalorganic chemical vapor deposition

(6) Lin, C H a Yen, B M a Kuo, H C a Chen, Haydn a Wu, T B b Stillman, G E a

a University of Illinois at Urbana Champaign (United States)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; ELECTRIC CONDUCTANCE; ELECTRIC PROPERTIES; ELECTRODES; GRAIN SIZE AND SHAPE; HYSTERESIS; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PEROVSKITE; POLARIZATION; SEMICONDUCTING LEAD COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DOMAIN BOUNDARY ENERGY;

THIN FILMS;

EID: 0033990003 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2000.0020 Document Type: Article

Times cited : (9)

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