Performance of a high productivity 300 mm dual stage 193 nm 0.75 NA TWINSCAN™ AT:1100B system for 100 nm applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691, Issue 1, 2002, Pages 696-708

  Rubingh, Rian ^a   Van Dommelen, Youri ^a   Tempelaars, Sjef ^a   Boonman, Marc ^a   Irwin, Roger ^a   Van Donkelaar, Edwin ^a   Burgers, Hans ^a   Savenije, Guustaaf ^a   Koek, Bert ^a   Thier, Michael ^b   Römpp, Oliver ^b   Hembd Söllner, Christian ^b  

^a ASML   (Netherlands)

^b CARL ZEISS SMT AG   (Germany)

Author keywords

100 nm node; 193 nm; Dual stage; Full wafer CD uniformity; Lens aberrations; Leveling; MA; MSD; Optical Lithography; Wafer topology

Indexed keywords

ABERRATIONS; DYNAMIC RANDOM ACCESS STORAGE; OPTICAL SENSORS; PROCESS CONTROL; PROJECTION SYSTEMS;

PROJECTION OPTICS;

PHOTOLITHOGRAPHY;

EID: 18644383499     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474619     Document Type: Article

References (11)

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