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Volumn 4346, Issue 1, 2001, Pages 634-650

ArF step & scan system with 0.75 NA for the 0.10 μm node

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; IMAGING TECHNIQUES; SCANNING; SCANNING ELECTRON MICROSCOPY; SYSTEM STABILITY;

EID: 0035759061     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.435761     Document Type: Article
Times cited : (18)

References (16)
  • 1
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    • See also L. Peters, "Ramping the 0.13 μm Generation", Semiconductor International, 24[1], (2001), p.56.
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  • 2
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    • KrF lithography for 130 nm
    • Jo Finders et al., "KrF Lithography For 130 nm", Proc SPIE, (2000), p. 192.
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    • Finders, J.1
  • 3
    • 0010513117 scopus 로고    scopus 로고
    • Towards a production worthy 0.13 μm process using alternating phase shift masks
    • Koen van Ingen Schenau et al., "Towards a production worthy 0.13 μm process using alternating phase shift masks", Proc. Olin Interface, (1999).
    • (1999) Proc. Olin Interface
    • Van Ingen Schenau, K.1
  • 4
    • 0010516575 scopus 로고    scopus 로고
    • 193 nm step and scan lithography, semicon Japan
    • G. Davies et al., "193 nm Step and Scan Lithography, Semicon Japan, SEMI Technology Symposium, (1998).
    • (1998) SEMI Technology Symposium
    • Davies, G.1
  • 5
    • 0010437391 scopus 로고    scopus 로고
    • Introducing 193 nm lithography
    • Ingrid Pollers et al., "Introducing 193 nm Lithography", Proc. Olin Interface, (1998).
    • (1998) Proc. Olin Interface
    • Pollers, I.1
  • 6
    • 0032627911 scopus 로고    scopus 로고
    • ArF step & scan exposure system for 0.15 μm and 0.13 μm technology node?
    • J. Mulkens et al., "ArF Step & Scan exposure system for 0.15 μm and 0.13 μm technology node?", Proc. SPIE, 3679 (1999), p. 506.
    • (1999) Proc. SPIE , vol.3679 , pp. 506
    • Mulkens, J.1
  • 7
    • 0033684526 scopus 로고    scopus 로고
    • Status of ArF lithography for the 130 nm technology node
    • Kurt Ronse et al., "Status of ArF lithography for the 130 nm technology node", Proc. SPIE, 4000, (2000), p.410.
    • (2000) Proc. SPIE , vol.4000 , pp. 410
    • Ronse, K.1
  • 8
    • 0010443239 scopus 로고    scopus 로고
    • Applying dipole illumination to characterize the imaging performance of 193 nm photoresists for the 100 nm node
    • Bert Vleeming et al., "Applying dipole illumination to characterize the imaging performance of 193 nm photoresists for the 100 nm node", Poster Arch Interface, (2000).
    • (2000) Poster Arch Interface
    • Vleeming, B.1
  • 9
    • 0032654738 scopus 로고    scopus 로고
    • Improved overlay performance using an enhanced phase grating adjustment system
    • J.H.M. Neijzen et al., "Improved overlay performance using an enhanced phase grating adjustment system", Proc. SPIE, 3677, (1999), p. 382.
    • (1999) Proc. SPIE , vol.3677 , pp. 382
    • Neijzen, J.H.M.1
  • 10
    • 0003121564 scopus 로고    scopus 로고
    • Lithographic process simulations for scanners
    • A. Erdmann et al., "Lithographic process simulations for scanners", Proc. SPIE, 3334, (1998), p. 164.
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  • 11
    • 0033699495 scopus 로고    scopus 로고
    • Dynamic performance of DUV step & scan systems and process latitude
    • Michel Klaassen et al., "Dynamic Performance Of DUV Step & Scan Systems And Process Latitude", Proc. SPIE, (2000), p. 776.
    • (2000) Proc. SPIE , pp. 776
    • Klaassen, M.1
  • 12
    • 0031339239 scopus 로고    scopus 로고
    • Performance of a step & scan system for DUV lithography
    • G. De Zwart et al., "Performance of a Step & Scan System for DUV Lithography", Proc. SPIE, 3051, (1997), p. 817.
    • (1997) Proc. SPIE , vol.3051 , pp. 817
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  • 13
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    • Scanning stage technology for exposure tools
    • Spring
    • Hans Butler et al., "Scanning stage technology for exposure tools", Microlithography World, Spring (1999).
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  • 14
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    • 0.7 NA DUV step & scan system for 150 nm imaging with improved overlay
    • Jan van Schoot et al., "0.7 NA DUV Step & Scan system for 150 nm imaging with improved overlay", Proc. SPIE, 3679, (1999), p. 448.
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  • 15
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  • 16
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    • Carsten Köhler et al., "Contact hole imaging at the 0.13 μm node using KrF lithography", Proc. Arch Interface, (2000), p. 211.
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    • Köhler, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.