Nanostructure and dropping phase transition temperature in vanadium dioxide thin films

International Journal of Nanoscience

Volumn 4, Issue 1, 2005, Pages 99-106

  Yi, Xinjian ^a   Li, Yi ^a   Chen, Sihai ^a,b   Wang, Shuangbao ^a,b   Lai, Jianjun ^a,b   Chen, Changhong ^a,b   Ma, Hong ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b National Laboratory for Photonics   (China)

Author keywords

Hysteresis; Nanomaterial; Nanostructure; Vanadium dioxide

Indexed keywords

COATINGS; HYSTERESIS; INFRARED IMAGING; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; SOLAR ENERGY; SUPERCONDUCTING TRANSITION TEMPERATURE; VANADIUM COMPOUNDS;

NANOMATERIALS; NANOSTRUCTURES; SMART WINDOWS; VANADIUM-DIOXIDE;

THIN FILMS;

EID: 18644376729     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219581X05002973     Document Type: Article

References (23)

1. C. G. Granqvist, Thin Solid Films 193/194, 730 (1990).
2. M. H. Lee, Sol. Energy Mater. Sol. Cells 71, 537 (2002).
3. M. H. Lee and J. S. Cho, Thin Solid Films 365, 5 (2000).
4. C. Reintsema, E. Grossman, J. Koch, SPIE Proc IR Technol. XXV 3698, 190 (1999).
5. L. A. L. de Almeida, G. S. Deep, A. M. N. Lima, H. Neff and R. C. S. Freire, IEEE Trans. Instrum. Meas. 50, 1030 (2001).
6. B. E. Cole, R. E. Higashi and R. A. Wood, Proc. IEEE 86, 1679 (1998).
7. C. H. Chen, X. J. Yi and J. Zhang, Infrared Phys. Technol. 42, 87 (2001).
8. M. A. Richardson and J. A. Coath, Opt. Laser Technol. 30, 137 (1998).
9. J. Verkelis, Z. Bliznkas and K. Breive, Sensors Actuators A 68, 338 (1998).
10. F. Gninneton, L. Sauques, J. C. Valmalette, F. Cros and J. R. Gavarri, Thin Solid Films 446, 287 (2004).
11. S. H. Chen, X. J. Yi and H. Ma, Opt. Quantum Electron. 35, 1351 (2003).
12. E. Sovero, D. Deakin, J. A. Higgins, J. F. DeNatale and S. Pittman, IEEE GaAs IC Symp., 101 (1990).
13. P. Jin and K. Tanemuras, J. Vac. Sci. Technol. Vac. Surf. Films 15, 1113 (1997).
14. T. J. Hanlon et al., Thin Solid Films 405, 234 (2002).
15. S. Deki, Y. Aci and A. Kajinami, J. Mater. Sci. 32, 4269 (1997).
16. E. Cavanna, J. P. Segaud and J. Livage, Mater. Res. Bull. 34, 167 (1999).
17. M. Nagashima and H. Wada, J. Crystal Growth 179, 539 (1997).
18. H. S. Choi, J. S. Ahn, J. H. Jung, T. W. Noh and D. H. Kim, Phys. Rev. B 54, 4621 (1996).
19. 2 thin films with adjustable phase transition temperature, Chinese Patent (application number: 200410060770.1).
20. E. E. Chain, Appl. Opt. 30, 2782 (1991).
21. G. V. Jorgenson and J. C. Lee, Sol. Energy Mater. 14, 205 (1986).
22. M. Tazawa, P. Jin and K. Yoshimura, Solar Energy 64, 3 (1998).
23. F. C. Case, J. Vac. Sci. Technol. A 2, 1509 (1984).