Stress field effects on the microstructure and properties of a-C:H thin films

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3662-3670

  Golanski, A ^a   Piazza, F ^a   Werckmann, J ^b   Relihan, G ^c   Schulze, S ^d  

^a CNRS   (France)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-C:H THIN FILM; CARBON ATOMS; CARBON FRACTION; EXTERNAL STRESS; EXTRINSIC STRESS; GRAPHITIC PLANES; HIGH DENSITY; INTRINSIC STRESS; MICROSTRUCTURE AND PROPERTIES; MULTILAYER STRUCTURES; OPTOELECTRONIC PROPERTIES; PLASMA CONDITIONS; PLASMA REACTORS; SI SUBSTRATES; SILICON SUBSTRATES; STRESS CONDITION; STRESS FIELD; SUBSTRATE BIAS;

ACETYLENE; CARBON; CARBON FILMS; FILM GROWTH; FILM PREPARATION; MICROSTRUCTURE; MULTILAYER FILMS; PLASMA APPLICATIONS; THIN FILMS; VAPOR DEPOSITION;

STRESSES;

EID: 18644376451     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506198     Document Type: Article

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