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Volumn 172, Issue 1, 1999, Pages 79-90

The preparation, characterization and tribological properties of TA-C : H deposited using an electron cyclotron wave resonance plasma beam source

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; DENSITY (SPECIFIC GRAVITY); DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; FRICTION; HYDROGEN BONDS; HYDROGENATION; PLASMA SOURCES; RAMAN SCATTERING; STRESS ANALYSIS; TRIBOLOGY;

EID: 0033096953     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199903)172:1<79::AID-PSSA79>3.0.CO;2-C     Document Type: Article
Times cited : (49)

References (27)
  • 11
    • 0344146192 scopus 로고
    • Ed. P.F. WILLIAMS, Kluwer Academic Press, Dordrecht
    • H. OECHSNER, Plasma Processing of Semiconductors, Ed. P.F. WILLIAMS, Kluwer Academic Press, Dordrecht 1990 (p. 157).
    • (1990) Plasma Processing of Semiconductors , pp. 157
    • Oechsner, H.1
  • 17
    • 0001620989 scopus 로고
    • Les Editions de Physique, Les Ulis (France)
    • B. DISCHLER, in: Europ. Mater. Res. Soc. Symp. Proc, Vol. 17, Les Editions de Physique, Les Ulis (France) 1987 (p. 189).
    • (1987) Europ. Mater. Res. Soc. Symp. Proc , vol.17 , pp. 189
    • Dischler, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.